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- Magnetic recording media comprising a silicon carbide

US6572958B1 - Magnetic recording media comprising a silicon carbide corrosion barrier layer and a c-overcoat - Google Patents

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Form of Rhombohedral Silicon Carbide (9R-SiC): A Pathway

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formation of highly porous CeO2/silicon oxycarbide catalysts

A new synthesis scheme for the formation of porous CeO2/Pt-polycarbosilane composites using inverse microemulsions is presented. Aqueous hexachloroplatinic

controlled, dielectrically isolated beta silicon carbide (

Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of

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Electrical Resistivity of Silicon Nitride–Silicon Carbide

Request PDF on ResearchGate | Electrical Resistivity of Silicon Nitride–Silicon Carbide Based Ternary Composites | New electrically conductive ternary compos

A silicon carbide room-temperature single-photon source —

Castelletto, S, Johnson, BC, Ivády, V, Stavrias, N, Umeda, T, Gali, A Ohshima, T 2014, A silicon carbide room-temperature single-photon

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CA1088107A - Silicon carbide-boron carbide sintered body -

ABSTRACT OF THE DISCLOSURE A particulate mixture of .beta. -silicon carbide, boron carbide and a carbonaceous additive is formed into a green body and

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Mapping of Epitaxial Graphene on Silicon Carbide - DTU Orbit

silicon carbide (SiC) wafers, and find significant variations in electrical properties across large regions, which are even reproduced across graphene on

liquid-phase sintered silicon carbide ceramics: a review:

Silicon carbide (SiC) is an electrical semiconductor with a wide porosity, second-phase addition (nitride, carbide, boride, graphene),

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pore size and porosity of closed-cell silicon oxycarbide

Shin-Han Kim; Young-Wook Kim; C. B. Park, 2004: Effect of inert filler addition on pore size and porosity of closed-cell silicon oxycarbide foams

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porous sludge-derived carbon supported on silicon carbide

(3D) hierarchical porous sludge-derived carbon supported on silicon carbide Carbon elimination by heat-treatment in hydrogen and its effect on thermal

SCTW35N65G2V - Silicon carbide Power MOSFET 650 V, 45 A, 55

N. Kishan Reddy, 1999: Influence of infiltrants on the electrical resistivity of silicon nitride bonded silicon carbide refractories Influence of infiltran

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