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type of bonding of silicon carbide

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A. C. Ferro; B. Derby, 1995: Liquid phase bonding of siliconized silicon carbide Study the formation mechanism of silicon carbide polytype by silicon

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The silicon carbide is polished to λ/10 PV flatness and then oxidized at 1100 °C in a wet environment prior to bonding to form a necessary layer

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A oxidation-bonding technique was successfully developed to fabricate porous SiC ceramics using the powder mixtures of SiC, Al2O3and C. The

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Ness J.M.; Page T.F., 1986: Polytype formation and transformation during the reaction-bonding of silicon carbide formation and transformation during t

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