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SILICON CARBIDE SEMICONDUCTOR DEVICE - Patent application

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US Patent # 6,975,030. Silicon carbide contact for

20051213- Application Number Filing Date Patent Number Issuecontact comprising: a substrate; a projection on and an electrically conductive si

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Physics Behind the Ohmic Nature in Silicon Carbide Contacts |

silicon carbide (SiC), has captured considerablecontacts especially contacts to p-type 4H-SiC [interfaces might have a different number of atoms

United Silicon Carbide Inc. | Simply More Efficient

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SILICON CARBIDE INSULATING GATE TYPE SEMICONDUCTOR DEVICE AND

Patent application number: 20120097980 Sign up to 1. A silicon carbide insulating gate type so as to form contact at the boundary line,

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Silicon Carbide Heating Elements(GD TYPE) By Luoyang Gefei Co

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Patent US4161743 - Semiconductor device with silicon carbide-

A semiconductor device includes a semiconductor substrate and a silicon carbide film formed in direct contact with the surface of the semiconductor substrate

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