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Single-grit simulation has been utilized to investigate the initiation and propagation of individual cracks in SiC grinding under controllable maximum

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Influence of target grit count and sintering temperature on

A pulsed laser deposition (PLD) technique for depositing SiC on Si(100) substrates using Nd3+:YAG laser at 355 nm is studied. The influence

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Table of Contents. Silicon Carbide (SiC) Grit Diamond (D)

Table of Contents. Silicon Carbide (SiC) Grit Diamond (D) Grit Triangle, Silicon Carbide (SiC) Grit Aluminum Oxide (AlO)

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