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2018215-Silicon carbide (SiC) is widely used in harsh environments and under extreme conditions, including at high-power, high-temperature, high-cur

G. R. Sawyer; T. F. Page, 1978: Microstructural characterization of REFEL (reaction-bonded) silicon carbides Toxicity in vitro of some silicon carbi

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controlled, dielectrically isolated beta silicon carbide (

Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of

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of Interfaces in Diffusion-Bonded Silicon Carbide Ceramics

Diffusion bonding was used to join silicon carbide (SiC) to SiC substrates using three kinds of interlayers: physical-vapor-deposited (PVD) Ti coatings (

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resistivity of silicon nitride bonded silicon carbide

N. Kishan Reddy, 1999: Influence of infiltrants on the electrical resistivity of silicon nitride bonded silicon carbide refractories Influence of infiltran

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in a matrix of silicon carbide and silicon, or alternatively metal-silicon-diamond bonding porosity and pore sizes amount of silicon carbide and sili

study on bonding systems in alumina-silicon carbide-carbon

A comparative study on bonding systems in alumina-silicon carbide-carbon-based trough castable Venkatesh Pilli Department of Ceramic Engineering, National

TEM observation of rebonding on fractured silicon carbide

2018215-Silicon carbide (SiC) is widely used in harsh environments and under extreme conditions, including at high-power, high-temperature, high-cur

beneath fracture pits of reaction-bonded silicon carbide

Li, Zhipeng and Zhang, Feihu and Luo, Xichun (2018) Subsurface damages beneath fracture pits of reaction-bonded silicon carbide after ultra-precision

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Get PDF - Liquid phase bonding of siliconized silicon carbide

A. C. Ferro; B. Derby, 1995: Liquid phase bonding of siliconized silicon carbide Liquid-Liquid Phase Transition in Nanoconfined Silicon Carbide. Journ

US5030276A - Low pressure bonding of PCD bodies and method -

the diamond assembly being formed by an improved and novel bonding method 3 is a PCD in which silicon is present in the form of silicon carbide

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